Analysis and Design of Digital Integrated Circuits
Note that ox 3. The gate oxide capacitance per unit area is calculated using the dielectric constant of silicon dioxide and the oxide thickness tox. In this problem, assume that there is no channel-stop implant. Are they identical? If not, how would you express L in terms of LM and other parameters? Can you describe the relationship between the device junction temperature, ambient temperature, chip power dissipation and the packaging quality?
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